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QS6K1
Transistors
2.5V Drive Nch+Nch MOS FET
QS6K1
Structure
Silicon N-channel
MOS FET
External dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
1.0MAX
0.85
0.7
Features
1) Low on-resistance.
(6)
(5)
(4)
0~0.1
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
1pin mark
(1)
(2)
0.4
(3)
0.16
Each lead has same dimensions
Application
Power switching, DC / DC converter.
Packaging specifications
Abbreviated symbol : K01
Equivalent circuit
(6)
(5)
(4)
(6)
(5)
(4)
Package
Taping
Type
Code
TR
? 2
? 2
Basic ordering unit (pieces)
3000
QS6K1
(1)
(2)
(3)
? 1
? 1
(1) Tr1 Gate
(2) Tr2 Source
Absolute maximum ratings (Ta=25 ° C)
<It is the same ratings for the Tr1 and Tr2>
(1) (2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(3)
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
12
Unit
V
V
? A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
? 1
? 1
± 1.0
± 4.0
0.8
4.0
A
A
A
A
Total power dissipation (T C = 25 ° C)
Channel temperature
Storage temperature
P D
Tch
Tstg
? 2
1.25
0.9
150
? 55 to + 150
W / TOTAL
W / ELEMENT
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth (ch-a)
?
100
139
° C / W / TOTAL
° C / W / ELEMENT
? Mounted on a ceramic board
Rev.B
1/3
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相关代理商/技术参数
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QS6M4 制造商:ROHM Semiconductor 功能描述:MOSFET,Pch(20V)Nch(30V),1.5A2,TSMT6
QS6M4_1 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+Pch MOSFET
QS6M4TR 功能描述:MOSFET N+P 30 20V 1.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube